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Part Number Overview
Manufacturer Part Number
FQPF630
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Detailed Description
N-Channel 200 V 6.3A (Tc) 38W (Tc) Through Hole TO-220F-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
464
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 3.15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FQPF630
FAIFSCFQPF630
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF630
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 464
Unit Price: $0.65
Packaging: Bulk
MinMultiplier: 464
Packaging: Bulk
MinMultiplier: 464
Substitutes
-