Part Number Overview

Manufacturer Part Number
BFR750L3RHE6327
Description
RF BIPOLAR TRANSISTOR
Detailed Description
RF Transistor NPN 4.7V 90mA 37GHz 360mW Surface Mount PG-TSLP-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
944
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
4.7V
Frequency - Transition
37GHz
Noise Figure (dB Typ @ f)
0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain
21dB
Power - Max
360mW
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 60mA, 3V
Current - Collector (Ic) (Max)
90mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
PG-TSLP-3

Environmental & Export Classifications

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075

Other Names

2156-BFR750L3RHE6327
IFEINFBFR750L3RHE6327

Category

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Infineon Technologies BFR750L3RHE6327

Documents & Media

Datasheets
1(Datasheet)

Quantity Price

Quantity: 944
Unit Price: $0.32
Packaging: Bulk
MinMultiplier: 944

Substitutes

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