Part Number Overview

Manufacturer Part Number
IRFI614BTUFP001
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 250 V 2.8A (Tc) 3.13W (Ta), 40W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
2,219
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
275 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA

Environmental & Export Classifications

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-IRFI614BTUFP001
FAIFSCIRFI614BTUFP001

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFI614BTUFP001

Documents & Media

Datasheets
1(Datasheet)

Quantity Price

Quantity: 2219
Unit Price: $0.14
Packaging: Bulk
MinMultiplier: 2219

Substitutes

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