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Part Number Overview
Manufacturer Part Number
SIHP12N50C-E3
Description
MOSFET N-CH 500V 12A TO220AB
Detailed Description
N-Channel 500 V 12A (Tc) 208W (Tc) Through Hole
Manufacturer
Vishay Siliconix
Standard LeadTime
8 Weeks
Edacad Model
SIHP12N50C-E3 Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
555mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1375 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Base Product Number
SIHP12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHP12N50C-E3TRINACTIVE
SIHP12N50C-E3TR-ND
SIHP12N50C-E3CT-ND
SIHP12N50C-E3DKR
SIHP12N50C-E3DKRINACTIVE
SIHP12N50C-E3CT
SIHP12N50C-E3DKR-ND
SIHP12N50C-E3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHP12N50C-E3
Documents & Media
Datasheets
1(SIH(P,B,F)12N50C-E3)
PCN Assembly/Origin
1(Mult Dev Material Chg 30/Aug/2019)
HTML Datasheet
1(SIH(P,B,F)12N50C-E3)
EDA Models
1(SIHP12N50C-E3 Models)
Quantity Price
Quantity: 1000
Unit Price: $2.32462
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
Substitutes
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Quantity Available. : 824
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Unit Price. : $2.98000
Substitute Type. : Similar