Part Number Overview

Manufacturer Part Number
FDD3706
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 20 V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
14.7A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1882 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 44W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Environmental & Export Classifications

ECCN
EAR99
HTSUS
8541.29.0095

Other Names

FAIFSCFDD3706
2156-FDD3706

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD3706

Documents & Media

Datasheets
1(FDD3706 Datasheet)

Quantity Price

Quantity: 500
Unit Price: $0.6
Packaging: Bulk
MinMultiplier: 500

Substitutes

-