Part Number Overview

Manufacturer Part Number
SIHD4N80E-GE3
Description
MOSFET N-CH 800V 4.3A DPAK
Detailed Description
N-Channel 800 V 4.3A (Tc) 69W (Tc) Surface Mount TO-252AA
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
SIHD4N80E-GE3 Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
E
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
622 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SIHD4

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHD4N80E-GE3

Documents & Media

Datasheets
1(SIHD4N80E)
Featured Product
1(MOSFETs in 5G)
HTML Datasheet
1(SIHD4N80E)
EDA Models
1(SIHD4N80E-GE3 Models)

Quantity Price

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Unit Price: $0.70875
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Unit Price: $0.73302
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Unit Price: $0.76165
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Unit Price: $1.1167
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Unit Price: $1.403
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Quantity: 1
Unit Price: $1.69
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MinMultiplier: 1

Substitutes

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