Part Number Overview

Manufacturer Part Number
IXFP130N10T
Description
MOSFET N-CH 100V 130A TO220AB
Detailed Description
N-Channel 100 V 130A (Tc) 360W (Tc) Through Hole TO-220-3
Manufacturer
IXYS
Standard LeadTime
45 Weeks
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
HiPerFET™, Trench
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
104 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
IXFP130

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFP130N10T

Documents & Media

Datasheets
1(IXF(A,P)130N10T)
Environmental Information
1(Ixys IC REACH)

Quantity Price

Quantity: 300
Unit Price: $2.87597
Packaging: Tube
MinMultiplier: 300

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