Part Number Overview

Manufacturer Part Number
IXTI10N60P
Description
MOSFET N-CH 600V 10A TO262
Detailed Description
N-Channel 600 V 10A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
PolarHV™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IXTI10

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTI10N60P

Documents & Media

Datasheets
1(IXT(A,I,P) 10N60P)
HTML Datasheet
1(IXT(A,I,P) 10N60P)
Product Drawings
1(Leaded TO-263)

Quantity Price

-

Substitutes

Part No. : STB10N60M2
Manufacturer. : STMicroelectronics
Quantity Available. : 0
Unit Price. : $1.88000
Substitute Type. : Similar
Part No. : STD7ANM60N
Manufacturer. : STMicroelectronics
Quantity Available. : 3,584
Unit Price. : $1.63000
Substitute Type. : Similar