Part Number Overview

Manufacturer Part Number
SPI21N10
Description
MOSFET N-CH 100V 21A TO262-3
Detailed Description
N-Channel 100 V 21A (Tc) 90W (Tc) Through Hole PG-TO262-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs
38.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
865 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
SPI21N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IFEINFSPI21N10
SPI21N10IN
2156-SPI21N10-IT
SPI21N10XK
SPI21N10X
SP000013843
SPI21N10-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPI21N10

Documents & Media

Datasheets
1(SPI,SPP,SPB21N10 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPI,SPP,SPB21N10 G)

Quantity Price

-

Substitutes

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