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Part Number Overview
Manufacturer Part Number
SIHP12N60E-GE3
Description
MOSFET N-CH 600V 12A TO220AB
Detailed Description
N-Channel 600 V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
SIHP12N60E-GE3 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHP12N60E-GE3TR
SIHP12N60E-GE3TRINACTIVE
SIHP12N60E-GE3CT-ND
SIHP12N60E-GE3DKR-ND
SIHP12N60E-GE3CT
SIHP12N60E-GE3DKRINACTIVE
SIHP12N60E-GE3TR-ND
SIHP12N60E-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHP12N60E-GE3
Documents & Media
Datasheets
1(SiHF12N60E)
Featured Product
1(MOSFETs in 5G)
PCN Assembly/Origin
1(Mult Dev Material Chg 30/Aug/2019)
HTML Datasheet
1(SiHF12N60E)
EDA Models
1(SIHP12N60E-GE3 Models)
Quantity Price
Quantity: 5000
Unit Price: $1.12474
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Unit Price: $2.59
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Packaging: Tube
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