Part Number Overview

Manufacturer Part Number
TSM900N10CH X0G
Description
MOSFET N-CH 100V 15A TO251
Detailed Description
N-Channel 100 V 15A (Tc) 50W (Tc) Through Hole TO-251 (IPAK)
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
16 Weeks
Edacad Model
TSM900N10CH X0G Models
Standard Package
75
Supplier Stocks

Technical specifications

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
90mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1480 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
TSM900

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

TSM900N10CHX0G
TSM900N10CH X0G-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM900N10CH X0G

Documents & Media

Datasheets
1(TSM900N10CH X0G)
Environmental Information
()
HTML Datasheet
1(TSM900N10)
EDA Models
1(TSM900N10CH X0G Models)

Quantity Price

Quantity: 11250
Unit Price: $0.27321
Packaging: Tube
MinMultiplier: 11250

Substitutes

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