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Part Number Overview
Manufacturer Part Number
GES5816
Description
TRANS NPN 40V 0.75A TO92
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 750 mA 120MHz 500 mW Through Hole TO-92-3
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
2,959
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
750 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2mA, 2V
Power - Max
500 mW
Frequency - Transition
120MHz
Operating Temperature
-55°C ~ 135°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-GES5816
HARHARGES5816
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Harris Corporation GES5816
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 2959
Unit Price: $0.1
Packaging: Bulk
MinMultiplier: 2959
Packaging: Bulk
MinMultiplier: 2959
Substitutes
-