Part Number Overview

Manufacturer Part Number
SIHP30N60AEL-GE3
Description
MOSFET N-CH 600V 28A TO220AB
Detailed Description
N-Channel 600 V 28A (Tc) 250W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
EL
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
120mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2565 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP30

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SIHP30N60AEL-GE3CT
SIHP30N60AEL-GE3DKR
SIHP30N60AEL-GE3DKRINACTIVE
SIHP30N60AEL-GE3TR
SIHP30N60AEL-GE3TR-ND
SIHP30N60AEL-GE3CT-ND
SIHP30N60AEL-GE3TRINACTIVE
SIHP30N60AEL-GE3DKR-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHP30N60AEL-GE3

Documents & Media

Datasheets
1(SIHB30N60AEL ~)
PCN Assembly/Origin
1(Mult Dev Material Chg 30/Aug/2019)
HTML Datasheet
1(SIHB30N60AEL ~)

Quantity Price

-

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