Part Number Overview

Manufacturer Part Number
RN1905(T5L,F,T)
Description
TRANS 2NPN PREBIAS 0.2W US6
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
RN1905(T5L,F,T) Models
Standard Package
3,000
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
RN1905

Environmental & Export Classifications

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

RN1905(T5LFT)CT
RN1905(T5LFT)DKR
RN1905(T5LFT)TR

Category

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN1905(T5L,F,T)

Documents & Media

Datasheets
1(RN1901-06)
EDA Models
1(RN1905(T5L,F,T) Models)

Quantity Price

-

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