China
Spain
Rusia
Italy
GermanySI4010DY-T1-GE3
Part Number Overview
Manufacturer Part Number
SI4010DY-T1-GE3
Description
MOSFET N-CHANNEL 30V 31.3A 8SO
Detailed Description
N-Channel 30 V 31.3A (Tc) 6W (Tc) Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
31.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3595 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
6W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4010
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4010DY-T1-GE3CT
SI4010DY-T1-GE3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4010DY-T1-GE3
Documents & Media
Datasheets
1(SI4010DY)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Mult Devs Assembly Location 31/Jan/2023)
HTML Datasheet
1(SI4010DY)
Quantity Price
-
Substitutes
Part No. : SI4166DY-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 5,335
Unit Price. : $1.40000
Substitute Type. : Similar
Quantity Available. : 5,335
Unit Price. : $1.40000
Substitute Type. : Similar
Part No. : IRF7831TRPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 17,953
Unit Price. : $1.23000
Substitute Type. : Similar
Quantity Available. : 17,953
Unit Price. : $1.23000
Substitute Type. : Similar