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Part Number Overview
Manufacturer Part Number
IXFY4N60P3
Description
MOSFET N-CH 600V 4A TO252
Detailed Description
N-Channel 600 V 4A (Tc) 114W (Tc) Surface Mount TO-252AA
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
70
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™, Polar3™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
365 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IXFY4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFY4N60P3
Documents & Media
Datasheets
1(IXFx4N60P3)
HTML Datasheet
1(IXFx4N60P3)
Quantity Price
-
Substitutes
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