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Part Number Overview
Manufacturer Part Number
IRFI640G
Description
MOSFET N-CH 200V 9.8A TO220-3
Detailed Description
N-Channel 200 V 9.8A (Tc) 40W (Tc) Through Hole TO-220-3
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
IRFI640G Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFI640
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFI640G
Documents & Media
Datasheets
1(IRFI640G)
PCN Obsolescence/ EOL
1(SIL-018-2015-Rev-0 20/May/2015)
HTML Datasheet
1(IRFI640G)
EDA Models
1(IRFI640G Models)
Quantity Price
-
Substitutes
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