China
Spain
Rusia
Italy
GermanyPBSS5260QA147
Part Number Overview
Manufacturer Part Number
PBSS5260QA147
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 1.7 A 150MHz 325 mW Surface Mount DFN1010D-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
3,904
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1.7 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA, 2V
Power - Max
325 mW
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPPBSS5260QA147
2156-PBSS5260QA147
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PBSS5260QA147
Documents & Media
Datasheets
1(PBSS5260QA)
HTML Datasheet
1(PBSS5260QA)
Quantity Price
-
Substitutes
-