Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel Complementary
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
600mA, 500mA
Rds On (Max) @ Id, Vgs
620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
21.3pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-XFDFN Exposed Pad
Supplier Device Package
DFN1010B-6
Base Product Number
PMCXB900