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Part Number Overview
Manufacturer Part Number
SI4410DY,518
Description
MOSFET N-CH 30V 8SO
Detailed Description
N-Channel 30 V 10A (Tj) 2.5W (Ta) Surface Mount 8-SO
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
2 (1 Year)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4410DY /T3-ND
954-SI4410DY518
2156-SI4410DY,518
934056382518
NEXNXPSI4410DY,518
SI4410DY /T3
SI4410DY518
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. SI4410DY,518
Documents & Media
Datasheets
1(SI4410DY)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 03/Jul/2013)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Quantity Price
-
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