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Part Number Overview
Manufacturer Part Number
IRL8113PBF
Description
MOSFET N-CH 30V 105A TO220AB
Detailed Description
N-Channel 30 V 105A (Tc) 110W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2840 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRL8113PBF
SP001576430
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL8113PBF
Documents & Media
Datasheets
1(IRL8113(S,L)PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRL8113L Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Packing Material Update 16/Sep/2016)
HTML Datasheet
1(IRL8113(S,L)PbF)
Quantity Price
-
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