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Part Number Overview
Manufacturer Part Number
FCP190N60-GF102
Description
MOSFET N-CH 600V 20.2A TO220-3
Detailed Description
N-Channel 600 V 20.2A (Tc) 208W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FCP190N60-GF102 Models
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
SuperFET® II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2950 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FCP190
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FCP190N60_GF102
FCP190N60_GF102-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCP190N60-GF102
Documents & Media
Datasheets
1(FCP190N60_GF102)
Environmental Information
()
Featured Product
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Mold Chg 28/Oct/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
EDA Models
1(FCP190N60-GF102 Models)
Quantity Price
-
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