Part Number Overview

Manufacturer Part Number
IRFD120
Description
MOSFET N-CH 100V 1.3A 4DIP
Detailed Description
N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
IRFD120 Models
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD120

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

*IRFD120
IRFD122
IRFD121

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFD120

Documents & Media

Datasheets
1(IRFD120)
PCN Obsolescence/ EOL
1(SIL-018-2015-Rev-0 20/May/2015)
HTML Datasheet
1(IRFD120)
EDA Models
1(IRFD120 Models)

Quantity Price

-

Substitutes

Part No. : IRFD120PBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 6,040
Unit Price. : $1.33000
Substitute Type. : Direct
Part No. : IRFD123PBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 6,908
Unit Price. : $1.33000
Substitute Type. : Parametric Equivalent