China
Spain
Rusia
Italy
GermanyFF6MR12W2M1PB11BPSA1
Part Number Overview
Manufacturer Part Number
FF6MR12W2M1PB11BPSA1
Description
SIC 2N-CH 1200V 200A
Detailed Description
Mosfet Array 1200V (1.2kV) 200A (Tj) Chassis Mount
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
FF6MR12W2M1PB11BPSA1 Models
Standard Package
18
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolSiC™+
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
200A (Tj)
Rds On (Max) @ Id, Vgs
5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id
5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Base Product Number
FF6MR12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-FF6MR12W2M1PB11BPSA1
SP004134434
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF6MR12W2M1PB11BPSA1
Documents & Media
Datasheets
1(FF6MR12W2M1P_B11)
PCN Obsolescence/ EOL
1(Mult Dev LDD Rev 23/Dec/2022)
EDA Models
1(FF6MR12W2M1PB11BPSA1 Models)
Quantity Price
-
Substitutes
-