Mfr
Toshiba Semiconductor and Storage
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 µA @ 170 V
Capacitance @ Vr, F
65pF @ 650V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS12E65