Part Number Overview

Manufacturer Part Number
TRS12E65C,S1Q
Description
DIODE SIL CARB 650V 12A TO220-2L
Detailed Description
Diode 650 V 12A Through Hole TO-220-2L
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 µA @ 170 V
Capacitance @ Vr, F
65pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS12E65

Environmental & Export Classifications

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080

Other Names

TRS12E65CS1Q
TRS12E65C,S1Q(S

Category

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Toshiba Semiconductor and Storage TRS12E65C,S1Q

Documents & Media

PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Oct/2018)

Quantity Price

-

Substitutes

Part No. : TRS12E65F,S1Q
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 3
Unit Price. : $2.35000
Substitute Type. : Similar
Part No. : STPSC12H065D
Manufacturer. : STMicroelectronics
Quantity Available. : 976
Unit Price. : $4.37000
Substitute Type. : Similar
Part No. : NXPSC126506Q
Manufacturer. : WeEn Semiconductors
Quantity Available. : 990
Unit Price. : $6.18000
Substitute Type. : Parametric Equivalent