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Part Number Overview
Manufacturer Part Number
PHU11NQ10T,127
Description
MOSFET N-CH 100V 10.9A IPAK
Detailed Description
N-Channel 100 V 10.9A (Tc) 57.7W (Tc) Through Hole I-Pak
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
14.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
57.7W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-Pak
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
PHU11
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
PHU11NQ10T
PHU11NQ10T-ND
934056349127
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHU11NQ10T,127
Documents & Media
Datasheets
1(PHU11NQ10T)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHU11NQ10T)
Quantity Price
-
Substitutes
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