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Part Number Overview
Manufacturer Part Number
IPB65R190C7ATMA1
Description
MOSFET N-CH 650V 13A D2PAK
Detailed Description
N-Channel 650 V 13A (Tc) 72W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ C7
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB65R
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPB65R190C7ATMA1-ND
SP000929424
IPB65R190C7ATMA1DKR
IPB65R190C7ATMA1TR
IPB65R190C7ATMA1CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB65R190C7ATMA1
Documents & Media
Datasheets
1(IPB65R190C6ATMA1 Datasheet)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB65R190C6ATMA1 Datasheet)
Simulation Models
1(CoolMOS™ Power MOSFET 650V C7 Spice Model)
Quantity Price
-
Substitutes
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