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Part Number Overview
Manufacturer Part Number
HUF76009P3
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 20 V 20A (Tc) 41W (Tc) Through Hole TO-220AB
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
523
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
UltraFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
27mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF76009P3
FAIFSCHUF76009P3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF76009P3
Documents & Media
Datasheets
1(HUF76009D3ST)
Quantity Price
Quantity: 523
Unit Price: $0.57
Packaging: Bulk
MinMultiplier: 523
Packaging: Bulk
MinMultiplier: 523
Substitutes
-