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Part Number Overview
Manufacturer Part Number
IPB12CNE8N G
Description
MOSFET N-CH 85V 67A D2PAK
Detailed Description
N-Channel 85 V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
85 V
Current - Continuous Drain (Id) @ 25°C
67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB12C
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000096451
IPB12CNE8NG
IPB12CNE8N G-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB12CNE8N G
Documents & Media
Datasheets
1(IPx12CNE8N G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx12CNE8N G)
Quantity Price
-
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