IXTH32N65X

Part Number Overview

Manufacturer Part Number

IXTH32N65X

Description

MOSFET N-CH 650V 32A TO247

Detailed Description

N-Channel 650 V 32A (Tc) 500W (Tc) Through Hole TO-247 (IXTH)

Manufacturer

IXYS

Standard LeadTime

Edacad Model

Standard Package

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

IXYS

Series

Ultra X

Package

Tube

Product Status

Last Time Buy

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2205 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

Base Product Number

IXTH32

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

California Prop 65

Other Names

-

Documents & Media

Datasheets

1(IXTx32N65X)

Environmental Information

1(Ixys IC REACH)

PCN Obsolescence/ EOL

1(Mult DEV EOL/OBS 08/Nov/2023)

HTML Datasheet

1(IXTx32N65X)

Quantity Price

Quantity: 30

Unit Price: $6.343
Packaging: Tube
MinMultiplier: 30

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IXTH32N65X

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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