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Part Number Overview
Manufacturer Part Number
BSZ088N03MSGATMA1
Description
MOSFET N-CH 30V 11A/40A 8TSDSON
Detailed Description
N-Channel 30 V 11A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8
Package / Case
8-PowerTDFN
Base Product Number
BSZ088
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BSZ088N03MSGINCT
BSZ088N03MSGATMA1TR
BSZ088N03MSGXT
IFEINFBSZ088N03MSGATMA1
2156-BSZ088N03MSGATMA1
BSZ088N03MSGINTR
BSZ088N03MSGINTR-ND
BSZ088N03MSGINDKR
BSZ088N03MSG
SP000311509
BSZ088N03MSGINCT-ND
BSZ088N03MSGATMA1DKR
BSZ088N03MSGINDKR-ND
BSZ088N03MS G
BSZ088N03MSGATMA1CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSZ088N03MSGATMA1
Documents & Media
Datasheets
1(BSZ088N03MS G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSZ088N03MS G)
Simulation Models
1(MOSFET OptiMOS™ 30V N-Channel Spice Model)
Quantity Price
-
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