China
Spain
Rusia
Italy
GermanyFF150R12ME3GBOSA1
Part Number Overview
Manufacturer Part Number
FF150R12ME3GBOSA1
Description
IGBT MOD 1200V 200A 695W
Detailed Description
IGBT Module Trench Field Stop Half Bridge 1200 V 200 A 695 W Chassis Mount Module
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
10
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
EconoDUAL™
Package
Tray
Product Status
Not For New Designs
IGBT Type
Trench Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
200 A
Power - Max
695 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
10.5 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
FF150R12M
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFFF150R12ME3GBOSA1
2156-FF150R12ME3GBOSA1
FF150R12ME3G-ND
SP000317332
FF150R12ME3G
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FF150R12ME3GBOSA1
Documents & Media
Datasheets
1(FF150R12ME3G)
HTML Datasheet
1(FF150R12ME3G)
Quantity Price
Quantity: 10
Unit Price: $118.472
Packaging: Tray
MinMultiplier: 10
Packaging: Tray
MinMultiplier: 10
Substitutes
Part No. : FF150R12ME3GBOSA1
Manufacturer. : Rochester Electronics, LLC
Quantity Available. : 777
Unit Price. : $123.69000
Substitute Type. : Parametric Equivalent
Quantity Available. : 777
Unit Price. : $123.69000
Substitute Type. : Parametric Equivalent