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Part Number Overview
Manufacturer Part Number
IXTA10N60P
Description
MOSFET N-CH 600V 10A TO263
Detailed Description
N-Channel 600 V 10A (Tc) 200W (Tc) Surface Mount TO-263AA
Manufacturer
IXYS
Standard LeadTime
98 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
Polar
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IXTA10
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTA10N60P
Documents & Media
Datasheets
()
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXT(A,P) 10N60P)
Quantity Price
Quantity: 300
Unit Price: $3.0166
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
Substitutes
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