Mfr
Infineon Technologies
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
94mOhm @ 13.3A, 18V
Vgs(th) (Max) @ Id
5.7V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
744 pF @ 400 V
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Base Product Number
IMZA65