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Part Number Overview
Manufacturer Part Number
BFR949L3E6327
Description
RF BIPOLAR TRANSISTOR
Detailed Description
RF Transistor NPN 10V 50mA 9GHz 250mW Surface Mount PG-TSLP-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,463
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
10V
Frequency - Transition
9GHz
Noise Figure (dB Typ @ f)
1dB ~ 2.5dB @ 1GHz
Gain
21.5dB
Power - Max
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 6V
Current - Collector (Ic) (Max)
50mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
PG-TSLP-3-1
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
IFEINFBFR949L3E6327
2156-BFR949L3E6327
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Infineon Technologies BFR949L3E6327
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 3463
Unit Price: $0.09
Packaging: Bulk
MinMultiplier: 3463
Packaging: Bulk
MinMultiplier: 3463
Substitutes
-