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SIHB24N80AE-GE3

Part Number Overview

Manufacturer Part Number
SIHB24N80AE-GE3
Description
MOSFET N-CH 800V 21A D2PAK
Detailed Description
N-Channel 800 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
28 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
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Technical specifications

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Rds On (Max) @ Id, Vgs
184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1836 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB24

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB24N80AE-GE3

Documents & Media

Datasheets
1(E Series Power MOSFET)

Quantity Price

Quantity: 5000
Unit Price: $1.5975
Packaging: Tube
MinMultiplier: 1
Quantity: 2000
Unit Price: $1.66511
Packaging: Tube
MinMultiplier: 1
Quantity: 1000
Unit Price: $1.76837
Packaging: Tube
MinMultiplier: 1
Quantity: 500
Unit Price: $2.06524
Packaging: Tube
MinMultiplier: 1
Quantity: 100
Unit Price: $2.3234
Packaging: Tube
MinMultiplier: 1
Quantity: 50
Unit Price: $2.7106
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $3.42
Packaging: Tube
MinMultiplier: 1

Substitutes

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