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Part Number Overview
Manufacturer Part Number
STB18N55M5
Description
MOSFET N-CH 550V 16A D2PAK
Detailed Description
N-Channel 550 V 16A (Tc) 110W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STB18N55M5 Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™ V
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
192mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1260 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB18N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-11227-5-ND
497-11227-5
497-11227-1
497-11227-2
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB18N55M5
Documents & Media
Datasheets
1(STB,D,F,P18N55M5)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(IPD/15/9345 04/Aug/2015)
PCN Design/Specification
()
HTML Datasheet
1(STB,D,F,P18N55M5)
EDA Models
1(STB18N55M5 Models)
Quantity Price
-
Substitutes
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