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Part Number Overview
Manufacturer Part Number
BCR191WH6327
Description
TRANS PREBIAS PNP 50V SOT323-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 250 mW Surface Mount PG-SOT323-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
6,571
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200 MHz
Power - Max
250 mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323-3-1
Base Product Number
BCR191
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
IFEINFBCR191WH6327
2156-BCR191WH6327
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Infineon Technologies BCR191WH6327
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
-
Substitutes
-