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Part Number Overview
Manufacturer Part Number
SIR802DP-T1-GE3
Description
MOSFET N-CH 20V 30A PPAK SO-8
Detailed Description
N-Channel 20 V 30A (Tc) 4.6W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1785 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
4.6W (Ta), 27.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR802
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIR802DP-T1-GE3CT
SIR802DP-T1-GE3DKR
SIR802DPT1GE3
SIR802DP-T1-GE3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR802DP-T1-GE3
Documents & Media
Datasheets
1(SIR802DP)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Mult Devs Assembly Location 31/Jan/2023)
HTML Datasheet
1(SIR802DP)
Quantity Price
-
Substitutes
Part No. : BSC046N02KSGAUMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 19,920
Unit Price. : $1.60000
Substitute Type. : Similar
Quantity Available. : 19,920
Unit Price. : $1.60000
Substitute Type. : Similar