Part Number Overview

Manufacturer Part Number
NTD4959N-35G
Description
MOSFET N-CH 30V 9A/58A IPAK
Detailed Description
N-Channel 30 V 9A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-Pak
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 11.5V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 11.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1456 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-Pak
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
NTD49

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4959N-35G

Documents & Media

Datasheets
1(NTD4959N)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 07/Jul/2010)
HTML Datasheet
1(NTD4959N)

Quantity Price

-

Substitutes

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