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Part Number Overview
Manufacturer Part Number
PMPB100ENEA115
Description
SMALL SIGNAL N-CHANNEL MOSFET
Detailed Description
N-Channel 30 V 3.9A (Ta) 2W (Ta), 10W (Tc) Surface Mount DFN2020MD-6
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,902
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 10W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN2020MD-6
Package / Case
6-UDFN Exposed Pad
Base Product Number
PMPB100
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-PMPB100ENEA115
NEXNEXPMPB100ENEA115
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PMPB100ENEA115
Documents & Media
Datasheets
1(PMPB100ENE)
HTML Datasheet
1(PMPB100ENE)
Quantity Price
-
Substitutes
-