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Part Number Overview
Manufacturer Part Number
NTMSD2P102LR2G
Description
MOSFET P-CH 20V 2.3A 8SOIC
Detailed Description
P-Channel 20 V 2.3A (Ta) 710mW (Ta) Surface Mount 8-SOIC
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NTMSD2P102LR2G Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
FETKY™
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
90mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 16 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
710mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMSD2
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
ONSONSNTMSD2P102LR2G
2156-NTMSD2P102LR2G-ONTR
NTMSD2P102LR2GOS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMSD2P102LR2G
Documents & Media
Datasheets
1(NTMSD2P102LR2)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 03/Apr/2007)
PCN Design/Specification
1(Copper Wire 12/May/2009)
HTML Datasheet
1(NTMSD2P102LR2)
EDA Models
1(NTMSD2P102LR2G Models)
Quantity Price
Quantity: 1480
Unit Price: $0.2
Packaging: Bulk
MinMultiplier: 1480
Packaging: Bulk
MinMultiplier: 1480
Substitutes
-