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Part Number Overview
Manufacturer Part Number
IRF610LPBF
Description
MOSFET N-CH 200V 3.3A I2PAK
Detailed Description
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) Through Hole I2PAK
Manufacturer
Vishay Siliconix
Standard LeadTime
8 Weeks
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 36W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRF610
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRF610LPBF
Documents & Media
Datasheets
1(IRF610S, SiHF610S)
PCN Assembly/Origin
1(Mult Devices 18/Jul/2017)
HTML Datasheet
1(IRF610S, SiHF610S)
Product Drawings
()
Quantity Price
Quantity: 1000
Unit Price: $0.79043
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
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