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Part Number Overview
Manufacturer Part Number
IRFB4610PBF
Description
MOSFET N-CH 100V 73A TO220AB
Detailed Description
N-Channel 100 V 73A (Tc) 190W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
100
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3550 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFB4610
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRFB4610PBF-ND
SP001570704
2156-IRFB4610PBF
*IRFB4610PBF
448-IRFB4610PBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFB4610PBF
Documents & Media
Datasheets
1(IRFB4610, IRFS(L)4610)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Packing Material Update 16/Sep/2016)
HTML Datasheet
1(IRFB4610, IRFS(L)4610)
Simulation Models
1(IRFB4610PBF Saber Model)
Quantity Price
Quantity: 10000
Unit Price: $0.96775
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Quantity: 1
Unit Price: $2.31
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
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