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Part Number Overview
Manufacturer Part Number
MUN5235DW1T1G
Description
TRANS 2NPN PREBIAS 0.25W SOT363
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Manufacturer
onsemi
Standard LeadTime
6 Weeks
Edacad Model
MUN5235DW1T1G Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88/SC70-6/SOT-363
Base Product Number
MUN5235
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
MUN5235DW1T1GOSTR
MUN5235DW1T1G-ND
MUN5235DW1T1GOSDKR
MUN5235DW1T1GOSCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi MUN5235DW1T1G
Documents & Media
Datasheets
1(MUN5235DW1, NSBC123JDXV6, NSBC123JDP6)
Environmental Information
()
PCN Design/Specification
1(Copper Wire 08/Jun/2009)
PCN Assembly/Origin
1(Mult Dev Assembly 30/Jul/2020)
HTML Datasheet
1(MUN5235DW1, NSBC123JDXV6, NSBC123JDP6)
EDA Models
1(MUN5235DW1T1G Models)
Quantity Price
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