Part Number Overview

Manufacturer Part Number
PHW80NQ10T,127
Description
MOSFET N-CH 100V 80A TO247-3
Detailed Description
N-Channel 100 V 80A (Tc) 263W (Tc) Through Hole TO-247
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4720 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
PHW80

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

PHW80NQ10T
PHW80NQ10T-ND
934055695127

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHW80NQ10T,127

Documents & Media

Datasheets
1(PHW80NQ10T)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Jun/2009)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHW80NQ10T)

Quantity Price

-

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