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Part Number Overview
Manufacturer Part Number
IPB65R110CFDATMA1
Description
MOSFET N-CH 650V 31.2A D2PAK
Detailed Description
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
277.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB65R110
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPB65R110CFDATMA1
IPB65R110CFDATMA1CT
IPB65R110CFDCT
IPB65R110CFDATMA1DKR
IPB65R110CFD
IPB65R110CFDATMA1TR
SP000896400
IPB65R110CFDDKR
IPB65R110CFDDKR-ND
IPB65R110CFD-ND
ROCINFIPB65R110CFDATMA1
IPB65R110CFDCT-ND
IPB65R110CFDTR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB65R110CFDATMA1
Documents & Media
Datasheets
1(IPx65R110CFD)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx65R110CFD)
Simulation Models
1(CoolMOS™ Power MOSFET 650V CFD2 Spice Model)
Quantity Price
-
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