China
Spain
Rusia
Italy
GermanyAPT65GP60B2G
Part Number Overview
Manufacturer Part Number
APT65GP60B2G
Description
IGBT 600V 100A 833W TMAX
Detailed Description
IGBT PT 600 V 100 A 833 W Through Hole
Manufacturer
Microchip Technology
Standard LeadTime
46 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
POWER MOS 7®
Package
Tube
Product Status
Active
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
100 A
Current - Collector Pulsed (Icm)
250 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 65A
Power - Max
833 W
Switching Energy
605µJ (on), 896µJ (off)
Input Type
Standard
Gate Charge
210 nC
Td (on/off) @ 25°C
30ns/91ns
Test Condition
400V, 65A, 5Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Base Product Number
APT65GP60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microchip Technology APT65GP60B2G
Documents & Media
Datasheets
1(APT65GP60B2)
Environmental Information
()
HTML Datasheet
1(APT65GP60B2)
Quantity Price
Quantity: 1
Unit Price: $18.11
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
-