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Part Number Overview
Manufacturer Part Number
BSM75GB120DN2HOSA1
Description
IGBT MOD 1200V 105A 625W
Detailed Description
IGBT Module Half Bridge 1200 V 105 A 625 W Chassis Mount Module
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
10
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
105 A
Power - Max
625 W
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 75A
Current - Collector Cutoff (Max)
1.5 mA
Input Capacitance (Cies) @ Vce
5.5 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM75GB120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BSM75GB120DN2
SP000095923
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies BSM75GB120DN2HOSA1
Documents & Media
-
Quantity Price
-
Substitutes
Part No. : FF200R17KE3HOSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 35
Unit Price. : $175.62000
Substitute Type. : Similar
Quantity Available. : 35
Unit Price. : $175.62000
Substitute Type. : Similar