Part Number Overview

Manufacturer Part Number
IRF6706S2TR1PBF
Description
MOSFET N-CH 25V 17A DIRECTFET
Detailed Description
N-Channel 25 V 17A (Ta), 63A (Tc) 1.8W (Ta), 26W (Tc) Surface Mount DirectFET™ Isometric S1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 26W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric S1
Package / Case
DirectFET™ Isometric S1

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IRF6706S2TR1PBFCT
IRF6706S2TR1PBFTR
SP001528294
IRF6706S2TR1PBFDKR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6706S2TR1PBF

Documents & Media

Datasheets
1(IRF6706S2TR(1)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Product Drawings
1(IR Hexfet Circuit)

Quantity Price

Quantity: 500
Unit Price: $0.78658
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 100
Unit Price: $0.8066
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 10
Unit Price: $0.953
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 1
Unit Price: $1.11
Packaging: Cut Tape (CT)
MinMultiplier: 1

Substitutes

-